| Review: |
This volume contains twelve papers, starting with introductory papers summarising the early development of III-nitride emitters and a perspective on the development of III-nitrides for optical emitters. The rest of the book is divided into two parts: the Silicon part and the Compound part. Papers include: Dislocation networks formed by silicon wafer direct bonding; SOI-LEDs with carrier confinement; Si- and SiGE-based LEDs; MOS light-emitting devices; Deep UV nitride light emitters; AlN and AlGaN by MOVPE for UV light emitting devices; Nonpolar and semipolar orientations; Impact of point defects on the luminescence properties of (Al,Ga)N. |