Advances in Light Emitting Materials
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Author(s): B. Monemar, M. Kittler and H. Grimmeiss (Eds)
Publisher: Trans Tech Publications
ISBN: 9780878493586
Format: softback
278pp
Price: €167
Review Date: 26 October 2008
Review: This volume contains twelve papers, starting with introductory papers summarising the early development of III-nitride emitters and a perspective on the development of III-nitrides for optical emitters. The rest of the book is divided into two parts: the Silicon part and the Compound part. Papers include: Dislocation networks formed by silicon wafer direct bonding; SOI-LEDs with carrier confinement; Si- and SiGE-based LEDs; MOS light-emitting devices; Deep UV nitride light emitters; AlN and AlGaN by MOVPE for UV light emitting devices; Nonpolar and semipolar orientations; Impact of point defects on the luminescence properties of (Al,Ga)N.