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| Process Technology for Silicon Carbide Devices | Buy a book...
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| Author(s): | C-M Zetterling (Ed.) |
| Publisher: | IEE |
| ISBN: | 0852969988 |
| Format: | hardback |
| 176pp | |
| Price: | £59.00, $95.00 |
| Review Date: | 07 January 2003 |
| Review: | SiC has been known as a semiconductor device for many years, but there was a problem with producing it in sufficient quantity. In the late 1980s, it became available from a commercial vendor. This book describes the process technology for SiC devices, to enable the reader to investigate them further. The authors set out the advantages and material properties of SiC and describe the steps in fabricating SiC devices: growth, doping, etching, contact formation and dielectrics. The last chapter looks at typical devices that can be made in SiC: high-voltage devices; high frequency devices; and high-temperature and optical devices. |