| Review: |
There are 13 papers in this book covering a wide area of semiconductor theory and its technology. These cover specific work in interstitial clusters, optimisation of substrates, bulk recombination of point defects, cavity formation, shear moduli, tracer diffusion, defect luminescence, defect formation, defect states, redistribution of point defects and calculations methods for diffusion. These occupy 126 pages but the bulk of the book, 270 pages, contains over 800 abstracts on defects and diffusion from the literature over the period mid 2001 to mid 2002. These are categorized under 64 material headings. |