Process Technology for Silicon Carbide Devices
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Author(s): C-M Zetterling (Ed.)
Publisher: IEE
ISBN: 0852969988
Format: hardback
176pp
Price: £59.00, $95.00
Review Date: 26 November 2002
Review: Silicon carbide (SiC), previously only used for niche applications is now being investigated for wider uses. This book discusses its material properties and its advantages. It also explains the basic process steps used in fabricating SiC devices: bulk and epitaxial growth; ion implantation and diffusion; and Shottky and Ohmic contacts. Finally, high-frequency devices that can be made in SiC including high-voltage, high frequency and high temperature and optical devices are described.