Buy a book... 
| Strained Heterostructures: Material and Devices | Buy a book...
|
| Author(s): | C. K. Maiti, N. B. Chakrabarti and S. K. Ray (Eds) |
| Publisher: | IEE |
| ISBN: | 0852967780 |
| Format: | hardback |
| 496pp | |
| Price: | £59.00, $95.00 |
| Review Date: | 05 February 2002 |
| Review: | The development of powerful epitaxial growth techniques such as molecular beam epitaxy and the ultra-high vacuum chemical vapour deposition system has given rise to bandgap engineering in Group-IV alloys. This has paved the way for heterojunction bipolar and field effect transistors as well as other novel quantum devices. With the advent of manufacturable SiGe heterojunction dipole transistors and a greater architectural design flexibility it is envisaged that SiGe technology will find applications in the 2–30 GHz range for next generation systems applications. This book reviews the essential details, including material growth and device fabrication and circuit applications and describes new heterostructure devices. There are chapters on: strained layer epitaxy; the electronic properties of alloy layers; gate dielectrics on strained layers; SiGe heterojunction bipolar transistors; and heterostructure field effect transistors. |